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Initial adsorption of Ge on Si(1 1 1)-(7×7) surface at room temperature

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
498
Identifiers
DOI: 10.1016/s0039-6028(01)01445-5
Keywords
  • Germanium
  • Silicon
  • Scanning Tunneling Microscopy
Disciplines
  • Physics

Abstract

Abstract The initial stage of Ge adsorption on Si(1 1 1)-(7×7) surface has been investigated by ultrahigh-vacuum scanning tunneling microscopy at room temperature. We demonstrate that there is a critical nucleus for the adsorbed Ge clusters on Si(1 1 1)-(7×7) surface. Such clusters can behave like quantum dots, which display two states at +1.5 and −1.5 eV with respect to the Fermi level. The formation mechanism of the clusters is discussed.

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