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Selective growth of GaAs in the MOMBE and MOCVD systems

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
77
Identifiers
DOI: 10.1016/0022-0248(86)90316-7

Abstract

Abstract This paper describes a comprehensive study of selective epitaxial deposition of GaAs on partly masked GaAs substrates using TMG or TEG and AsH 3 in H 2 (MOCVD) at 5X10 2 to 10 5 Pa total pressure, and in an ultra high vacuum apparatus without carrier gas (MOMBE). A minimum temperature is required to obtain localized growth. This temperature increases with the overall pressure in the system and is larger for TEG than for TMG. It is proposed that the presence of an adsorbed As species on the SiO 2 is responsible for the breakdown of selectivity.

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