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Characterization of mismatched InAsGaAs heterostructures grown by metalorganic chemical vapor deposition

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Volume
93
Identifiers
DOI: 10.1016/0022-0248(88)90575-1
Disciplines
  • Chemistry

Abstract

Abstract Data are presented from an investigation of the thermal stability and interfacial abruptness as a function of growth temperature for InAsGaAs strained layer interfaces grown by metalorganic chemical vapor deposition. Transmission electron microscopy data show symmetric abrupt InAsGaAs interfaces at lower growth temperatures and asymmetry at higher growth temperatures. The relationship of the asymmetry to the growth process, and not to interdiffusion, is confirmed by analysis of samples grown at lower temperature and annealed at higher temperatures.

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