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Microscopic aspects of oxygen precipitation in silicon

Authors
Journal
Materials Science and Engineering B
0921-5107
Publisher
Elsevier
Publication Date
Volume
4
Identifiers
DOI: 10.1016/0921-5107(89)90208-0
Disciplines
  • Physics

Abstract

Abstract In this review, using thermodynamic and kinetic considerations, we explain (1) the proper implication of transport-limited growth, (2) various quasi-equilibrium, morphological and structural characteristics of thermally induced oxide precipitates and secondary crystallographic defects and (3) various electrically active and inactive impurity effects upon oxygen precipitation in Czochralski silicon. A model based upon the formation of Frenkel defects at the silicon-silica interface has shown promise on microscopic accounts of various experimentally observed precipitation behaviors.

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