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Mesotaxy by nickel diffusion into a buried amorphous silicon layer

DOI: 10.1016/b978-0-444-89418-2.50043-6
  • Chemistry


Abstract A novel method to produce a buried epitaxial suicide in silicon is described. Metal atoms are deposited onto the surface of a piece of crystalline silicon (c-Si) which contains a buried amorphous silicon (a-Si) layer in the “as-implanted” state. Prolonged heating at 350°C leads to diffusion of metal atoms through the thin c-Si top layer followed by a chemical reaction with the buried a-Si, forming buried epitaxial suicide islands. These islands then move through the a-Si layer, leaving behind epitaxially crystallized silicon.

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