Affordable Access

Publisher Website

Mesotaxy by nickel diffusion into a buried amorphous silicon layer

Authors
Identifiers
DOI: 10.1016/b978-0-444-89418-2.50043-6
Disciplines
  • Chemistry

Abstract

Abstract A novel method to produce a buried epitaxial suicide in silicon is described. Metal atoms are deposited onto the surface of a piece of crystalline silicon (c-Si) which contains a buried amorphous silicon (a-Si) layer in the “as-implanted” state. Prolonged heating at 350°C leads to diffusion of metal atoms through the thin c-Si top layer followed by a chemical reaction with the buried a-Si, forming buried epitaxial suicide islands. These islands then move through the a-Si layer, leaving behind epitaxially crystallized silicon.

There are no comments yet on this publication. Be the first to share your thoughts.

Statistics

Seen <100 times
0 Comments

More articles like this

Mesotaxy by nickel diffusion into a buried amorpho...

on Materials Science and Engineer... Jan 01, 1992

Buried amorphous-layer impact on dislocation densi...

on Journal of microscopy October 2006

Distribution of gettering centres at a buried amor...

on Nuclear Instruments and Method... Jan 01, 1999

Diffusion length measurements of thin amorphous si...

on Solid State Communications Jan 01, 1989
More articles like this..