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Raman scattering studies on single-crystalline bulk AlN: temperature and pressure dependence of the AlN phonon modes

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
231
Issue
3
Identifiers
DOI: 10.1016/s0022-0248(01)01469-5
Keywords
  • A1. Characterization
  • A2. Single Crystal Growth
  • B1. Nitrides
  • B2. Semiconducting Aluminium Compounds

Abstract

Abstract We report on the Raman analysis of single-crystalline bulk AlN. AlN phonon modes were investigated as a function of temperature and hydrostatic pressure. Phonon decay channels were studied via the AlN Raman linewidth. Mode Grüneisen parameters describing the low-pressure behavior of the AlN phonon modes were determined and used to estimate hydrostatic stress in amber discolored AlN substrates.

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