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A four-moments analysis of1H range profiles IN Si

Authors
Journal
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
0168-583X
Publisher
Elsevier
Publication Date
Volume
29
Issue
3
Identifiers
DOI: 10.1016/0168-583x(87)90073-5

Abstract

Abstract 1H implants, with energies ranging from 25–300 keV, were profiled by the 15N nuclear reaction using an in-line low-level-background facility. The numerical analysis shows that all four moments, projected range, range straggling, skewness, and kurtosis agree with TRIM calculations to within 2%, 8%, 12% and 15%, respectively.

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