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Hole resonant tunneling in Si/SiGe heterostructures

Authors
Journal
Superlattices and Microstructures
0749-6036
Publisher
Elsevier
Publication Date
Volume
5
Issue
2
Identifiers
DOI: 10.1016/0749-6036(89)90286-3
Keywords
  • Paper From The Trieste Conference

Abstract

Abstract Resonant tunneling of holes in Si/SiGe double-barrier structures has been investigated by measurement of current-voltage characteristics and magneto-tunneling with the field parallel to the growth direction. Negative differential resistance with an improved peak-to-valley current ratio of about three at low temperature has been observed in a sample with a 3.4-nm-wide Si 0.78Ge 0.22 well between 5.3 nm Si barriers. Correspondences between the measured resonant peak positions and quasi-bound state levels associated with both light and heavy holes have been investigated through simultaneous numerical solutions of Poisson's and Schrödinger's equations, and a calculation of in-plane dispersion using a 2×2 Luttinger-Kohn Hamiltonian.

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