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Dislocation-induced effects in the reflectance-difference spectrum of semi-insulating GaAs (100)

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
98
Issue
5
Identifiers
DOI: 10.1016/0038-1098(95)00721-0
Keywords
  • A. Semiconductors
  • A. Surfaces And Interfaces
  • D. Optical Properties

Abstract

Abstract We report on reflectance-difference (RD) spectroscopy of semiinsulating GaAs (100) and show that the RD with spectra have a component associated with an anisotropic surface strain due to 60° dislocations. For the samples reported in this paper the anisotropic strain results in a normalized effective change in lattice constant in the range from 10 −5 to 10 −4. Besides contributing to the understanding of RD lineshapes, the results reported in this paper show that RD spectroscopy can be used as a very sensitive probe to characterize dislocations in zincblende semiconductors.

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