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Gas Response of Oxide Semiconductor Film Devices under Control of Diffusion and Reaction Effects

Authors
Journal
Procedia Chemistry
1876-6196
Publisher
Elsevier
Publication Date
Volume
1
Issue
1
Identifiers
DOI: 10.1016/j.proche.2009.07.164
Keywords
  • Semiconductor
  • Gas Sensor
  • Diffusion
  • Reducing Gas
  • Size Effect
  • Oxide

Abstract

Abstract Sensor response of film semiconductor gas sensors to reducing gas under control of diffusion and reaction effects can be formulated as a function of film thickness and Hatta number based on recent theory of the receptor function of small crystals. The bell shaped dependence of the response on temperature can also be derived theoretically.

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