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Step coverage from an extended sputtering source

Authors
Journal
Thin Solid Films
0040-6090
Publisher
Elsevier
Publication Date
Volume
23
Issue
1
Identifiers
DOI: 10.1016/0040-6090(74)90215-6

Abstract

Abstract A computer program has been developed which simulates the growth of a thin film, in a sputtering environment, over an arbitrary step profile. The model specifically includes an account of self-shadowing of the film and makes various assumptions as to the angular distribution of material as it leaves the sputtering target. The phenomenon of microcrack formation is discussed in detail and it is shown that for microelectronic applications good step coverage is possible only through judicious sloping of the step profiles and the incorporation of substrate motion. The model is also compared with experimental measurements and good agreement is demonstrated.

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