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AES and ELS study of gold deposition on top of hydrogen saturated Si(1 1 1) surfaces

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
51
Issue
7
Identifiers
DOI: 10.1016/0038-1098(84)91034-2

Abstract

Abstract Gold was deposited on top of hydrogen saturated Si(1 1 1) clean surfaces. The electronic nature and atomic intermixing between gold overlayer and silicon substrate were studied by AES and ELS. It is claimed that there is a critical thickness (∼ 2 ML), where 1 ML = 7.8 × 10 14 atoms cm −2 for Si(1 1 1), for gold to induce alloyed metallic overlayer formation on the surface of a specimen due to intermixing reaction independently whether a surface of Si(1 1 1) substrate is saturated with hydrogen atoms or not.

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