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Investigation of surfaces by means of the Zr Mζ radiation

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
89
Identifiers
DOI: 10.1016/0039-6028(79)90647-2

Abstract

Abstract Photoelectron spectra excited by Zr Mζ radiation of the valence electrons of films of copper and indium and of clean silicon as well as the Si 2p level of clean silicon and of silicon after reaction in ammonia were investigated. The results show up a disagreement between theory and experiment for the Cu 3d/Cu 3p cross-section ratio, for the interpretation of the valence band of silicon and for the electron escape depth in SiO 2. The reaction of NH 3 with Silicon (111) gives information about the formation of an interfacial region between thermally-grown nitride films and the Si substrates.

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