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Influence of mole ratio of Si: C on the magnetic property of undoped and vanadium carbide doped 3C-SiC

Authors
Journal
Chemical Physics Letters
0009-2614
Publisher
Elsevier
Publication Date
Volume
556
Identifiers
DOI: 10.1016/j.cplett.2012.12.008

Abstract

Abstract Ferromagnetism (FM) of 3C-SiC powders have been studied by tuning the mole ratio of Si: C. The results of magnetic measurements show that with increasing Si: C, the saturation magnetization (Ms) of undoped 3C-SiC is hardly varied while the Ms of vanadium carbide (VC) doped 3C-SiC is reduced. The introduction of VC mainly leads to the decrease of divacancies (VSiVC) concentration which is the FM origin, and this effect is enhanced with increasing Si: C. Furthermore, the increase of carrier concentration hardly influences the FM of 3C-SiC at VC doping concentration of 0.1wt.%.

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