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TEM assessment of GaN epitaxial growth

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
210
Identifiers
DOI: 10.1016/s0022-0248(99)00668-5
Keywords
  • Tem
  • Defects
  • Semiconductors
  • Gan
Disciplines
  • Chemistry

Abstract

Abstract A generalised description of the predominant defect microstructures within homo- and hetero-epitaxial GaN grown by chemical vapour deposition and molecular beam epitaxy is presented. The nature of dislocations, basal and prismatic plane stacking faults, domain boundaries, micropipes, voids and inversion domains are briefly described, with particular regard being given to their mechanisms of formation.

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