2-5m InAs/GaSb superlattices infrared photodetector
- Authors
-
- Xu, Yingqiang
- Tang, Bao
- Wang, Guowei
- Ren, Zhengwei
- Niu, Zhichuan
- Xu, Y.([email protected])
- Publication Date
- Jan 01, 2011
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
-
- Alignment
- Atomic Force Microscopy
- Atomic Spectroscopy
- Detectors
- Epitaxial Growth
- Gallium Alloys
- Gallium Arsenide
- Indium Arsenide
- Infrared Detectors
- Molecular Beam Epitaxy
- Molecular Beams
- Optoelectronic Devices
- Semiconducting Gallium
- Superlattices
- Transmission Electron Microscopy
- X Ray Diffraction
- 半导体物理
- Alignment
- Atomic Force Microscopy
- Atomic Spectroscopy
- Detectors
- Epitaxy
- Gallium Alloys
- Gallium Arsenide
- Indium Arsenide
- Infrared Detectors
- Atomic Layer Deposition
- Molecular Beams
- Optoelectronic Devices
- Metallic Superlattices
- Transmission Electron Microscopy
- X-Ray Crystallography
- Mechanical Alignment
- Self Aligning
- Afm (Microscopy)
- Afm
- Scanning Force Microscopy
- Atomic Force Microscope
- Afm
- Spectroscopy, Atomic
- Sensors
- Sensor Placement
- Sensor Deployment
- Sensor Localisation
- Sensor Positioning
- Sensing Devices
- Pickoffs
- Pickups
- Probes (Instruments)
- Probes (Sensors)
- Epitaxial Growth
- Solid Phase Epitaxial Growth
- Solid Phase Epitaxy
- Spe
- Gaas
- Arseniures De Gallium
- Galliumarsenid
- Infra-Red Detectors
- Ir Detectors
- Photovoltaic Detectors
- Superconducting Infrared Detectors
- Submillimetre Wave Detectors
- Sub-Mm Wave Detectors
- Superconducting Photodetectors
- Superconducting Ultraviolet Detectors
- Terahertz Wave Detectors
- Atomic Layer Epitaxial Growth
- Ale
- Mle Growth
- Molecular Layer Epitaxial Growth
- Chemical Beam Epitaxial Growth
- Cbe
- Gas Source Mbe
- Gsmbe
- Metalorganic Molecular Beam Epitaxy
- Mombe
- Ommbe
- Chemical Vapour Deposition
- Apcvd
- Chemical Vapor Deposition
- Cvd
- Laser Cvd
- Laser-Induced Cvd
- Lpcvd
- Chemical Vapour Infiltration
- Chemical Vapor Infiltration
- Cvi
- Crystal Growth From Vapour
- Laser Deposition
- Mocvd
- Metalorganic Chemical Vapour Deposition
- Movpe
- Omcvd
- Omvpe
- Molecular Beam Epitaxial Growth
- Mbe
- Migration-Enhanced Epitaxy
- Vapour Phase Epitaxial Growth
- Hot Wall Epitaxial Growth
- Vapor Phase Epitaxial Growth
- Vpe
- Cvi (Fabrication)
- Ald
- Molecular Beam Epitaxy
- Coulomb-Bethe
- Many-Body Expansion
- Molecular Rays
- Positive Rays
- Canal Rays
- Goldstein Rays
- Rays, Canal
- Photo Electric Devices
- Photo Electronic Devices
- Photoelectronic Devices
- Opto-Isolators
- Opto-Couplers
- Optrons
- Photoelectric Devices
- Multilayers, Compositionally Modulated Metallic
- Superlattices
- Optical Superlattices
- Order Disorder Relationships
- Disordering
- Modulated Structure
- Ordering
- Ordnungs-Entordnungsbeziehungen
- Relation Ordre-Desordre
- Tem
- Durchstrahlungs-Elektronenmikroskopie
- Microscopie Par Transmission
- Transmission Microscopy
- Tem (Microscopy)
- Electron Microscopy (Transmission)
- X射线衍射
- X Ray Diffraction
- X-Ray Diffraction
- Borrmann Effect
- Debye-Scherrer Cameras
- Laue Effect
- Patterson Diagrams
- Pendellosung Fringes
- Radiocrystallography
- Weissenberg Cameras
- Xrd
- Diffraction Des Rayons X
- Roentenbeugung
- Roentgenbeugung
- X Ray Crystallography
- Xray Diffraction
- x射线晶体学
- X Ray Diffractometers
- License
- Unknown
- External links
Abstract
High quality InAs/GaSb type-II band alignment superlattices infrared photodetectors with different InAs thicknesses were grown on GaSb and GaAs substrates by molecular beam epitaxy(MBE). The detection wavelengths of these InAs/GaSb SLs infrared detectors were2-5μm. The material and optical qualities of InAs/GaSb superlattices on different substrates by MBE were characterized by different measurement methods, including high resolution transmission electron microscope(HRTEM), atomic force microscope(AFM), X-ray diffraction(XRD), low temperature(LT) and room temperature(RT) photo response spectrum and LT and RT photoluminescence(PL) spectrum. Then2-5μm GaAs and GaSb based infrared photodetectors were fabricated by these InAs/GaSb type-II band alignment superlattices materials. The detectivity of the2μm GaAs based InAs/GaSb SLs photodetector is4×109 cm· Hz1/2/W at77K and that of the5μm GaSb based InAs/GaSb SLs photodetector is1.6×1010 cm· Hz1/2/W at the same temperature.