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Optical emission spectroscopy of rf-magnetron sputtering plasma for fabrication of ZnS:Mn active layer in thin-film EL devices

Authors
Publication Date
Keywords
  • Electroluminescence / El / Zns:Mn / Sputtering / Optical Emission Spectroscopy / Oes
Disciplines
  • Chemistry

Abstract

Mem. Fac. Eng., Osaka City Univ., Vol. 36,pp. 13-19.(1995) Optical emission spectroscopy of rf-magnetron sputtering plasma for fabrication of ZnS:Mn active layer in thin-film EL devices by Satoshi UMEKAWA*, Atushi NITTA**, Kenji TANAKA***, Minoru KUSABlRAKI****, Yoshiharu MAEKAWA**** and Masao AOZASA***** (Received September 29, 1995) Synopsis ZnS:Mn active layers in electroluminescent devices were fabricated by rf-magnetron sputtering, and the luminous characteristics of the devices were examined. The optical emission spectra of the sputtering plasma for active layers were examined, and the dependence of the qualities of active layers and the luminous characteristics of the devices on the plasma was investigated. Keywords : electroluminescence, EL, ZnS:Mn, sputtering, optical emission spectroscopy, OES 1. Introduction Ac thin -film electroluminescent (ACTFEL) devices have been considered as one of the promising flat-panel displays because of their advantages such as completely solid state and emissive display with wide viewing angle. The TFEL devices have been fabricated by sputtering, electron- beam (EB) deposition, metalorganic chemical vapor deposition (MOCVD) and atomic layer epitaxy (ALE). The sputtering is a convenient fabrication method which enables easy concentration control of doping material and large area device fabrication at low cost. However, the sputtering processes are not yet well understood and they have been investigated by many workers. In this study, we fabricated TFEL devices of the structure that an active layer is sandwiched between two insulating layers by rf-magnetron sputtering. The optical emission spectra of the sputtering plasma were examined when the active layer was deposited and the effect of the plasma state on the qualities of active layer and the luminous characteristics of the devices were investigated. 1) * Student, Master Course of Dept. of Electrical Engineering ** Student, Doctor Course of Dept. of Electrical Engineering *** Res

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