Affordable Access

Publisher Website

ONO structures investigated by SIMS, RBS, and NRA

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
Publication Date
DOI: 10.1016/0168-583x(92)95551-2


Abstract Reoxidized nitrided oxides (ONO) will be used in ULSI technology to improve the properties of thin gate dielectrics as high breakdown fields, radiation resistance, and diffusion barriers. The ONO structures analyzed in our study are fabricated in a rapid thermal processing reactor (RTP) using oxygen and ammonium ambients. Typical data for the sequential processing mode are: rapid thermal oxidation (RTO) in oxygen atmosphere at 1100° C and rapid thermal nitridation in ammonium atmosphere (RTN) at 1050° C followed by RTO at 1150° C. Due to the complexity of the growth process it is very important to verify the resulting layers with analytical methods. The whole structure is only about 250 Å thick. To analyse the sequence, composition and thickness of the layers, the depth resolution of SIMS is necessary. On the other hand, for quantification, RBS and NRA can be used. When the bulk signal is suppressed by channelling, the signal of oxygen, and in special cases nitrogen, can be evaluated from the He + backscattering spectrum. For nuclear reaction analysis, the reactions of nitrogen with deuterium are used. The combination of SIMS and the accelerator techniques allow quantitative analysis and depth profiling of this structure.

There are no comments yet on this publication. Be the first to share your thoughts.


Seen <100 times

More articles like this

SIMS, RBS, ion channelling, and TEM studies of the...

on Nuclear Instruments and Method... Jan 01, 1992

Surface analysis by RBS and NRA

on Vacuum Jan 01, 1984

Depth analysis of oxygen and gold in thin film sem...

on Nuclear Instruments and Method... Jan 01, 1988

The use of HI-ERDA/RBS and NRA/RBS to depth profil...

on Nuclear Instruments and Method... Jan 01, 2008
More articles like this..