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Design optimization of NEMS switches for single-electron logic applications

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  • Communication
  • Design
  • Physics


Microsoft Word - SNW2008.doc Design Optimization of NEMS Switches for Single-Electron Logic Applications Benjamin Pruvost1, Hiroshi Mizuta2,3, and Shunri Oda1,3 1QNERC, Tokyo Institute of Technology 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, JAPAN 2School of Electronics and Computer Science, University of Southampton, SO17 1BJ, United Kingdom and 3SORST JST (Japan Science and Technology) E-mail: [email protected], Phone: +81-3-5734-2542, Fax: +81-3-5734-2542 1. Introduction Hybrid devices coupling single-electron transistors (SETs) to nano electromechanical systems (NEMS) have recently drawn much attention for their promised experimental insight into quantum aspects of mechanical systems as much as for their potential applications in communication and information technology. Some groups exploited the ultra high sensitivity of the SET to read out the motion of a capacitively coupled nanomechanical resonator, managing to approach its quantum limit [1], [2]. Another group proposed an SET whose island is located at the top of a free-standing silicon nanopillar shuttling between the source and the drain [3]. Finally, a suspended-gate architecture, which would enable to switch the SET gate capacitance between two values, has been suggested in [4, 5], although no study on its actual performances has yet been conducted. In this work, we focus on the design optimization and the analysis of the latter device in order to evaluate its merit and demerit. We propose a realistic low-voltage window design methodology, which could actually also be used for systematical design of conventional NEMS switches. We also demonstrate some applications that arise from the movable gate, such as a way to cope with the random background charge problem and to build logic functions. 2. Design Optimization and Performance Analysis The principle of the suspended-gate SET is depicted in Fig. 1: it combines a conventional SET and a tunable NEMS capacitor which

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