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Silicon radio frequency single-electron transistors operating at above 4.2 K

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  • Engineering
  • Medicine
  • Physics


Microsoft Word - Final manossdm2008.doc Silicon radio frequency single-electron transistors operating at above 4.2 K M. Manoharan 1 , Yoshishige Tsuchiya 1, 2, 4 , Shunri Oda 1, 4 , and Hiroshi Mizuta 2, 3, 4 1Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo, Japan. e-mail: 2 School of Electronics and Computer Science, University of Southampton, Southampton, UK 3Department of Physical Electronics, Tokyo Institute of Technology, Tokyo, Japan 4SORST JST (Japan Science and Technology Agency) 1. Introduction Silicon detectors are widely used as tracking detectors in high-energy particle physics, astronomy, and medical fields. In X-ray imaging, it is also used in crystallography, and medical imaging and mechanical engineering for alignment. They have also found applications in detection of photons in medicine and astrophysics [1]. But, charge sensitivity of the readout electronics often limits the sensitivity of these de- tectors. Requirement of the readout electronics are high charge sensitivity, wide bandwidth, and high temperature operation. Other requirements are, the read out electronics should not suffer from charge offset problem, and should be stable against long term operation. High sensitivity and wide bandwidth can be realized using the demonstrated Radio Frequency Single Electron Transistor (RF-SET) based on Al SET [2]. Other conditions have already been realized by the SOI based Silicon SET [3-5]. So, silicon RF-SET will be the only solution to meet all these requirements to realize the high sensitive silicon detector readout electronics. Operation of the RF-SET based on 2-DEG in intrinsic silicon is reported at 100 mK [6]. Main difficulty in realiz- ing silicon RF-SET is high resistance of the silicon SET, which degrades the response severely [7]. In this paper, we report the successful

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