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Comments on the use of implanted Ar as a binding energy reference

Authors
Journal
Journal of Electron Spectroscopy and Related Phenomena
0368-2048
Publisher
Elsevier
Publication Date
Volume
50
Issue
2
Identifiers
DOI: 10.1016/0368-2048(90)87080-8

Abstract

Abstract The binding energy of the Ar2 p 3 2 level of Ar implanted into insulating oxides has been determined via Au calibration. The Ar2 p 3 2 binding energy has been demonstrated to be constant at a binding energy of 242.3 ± 0.1 eV for a range of oxides including γ-Al 2O 3, ZrO 2, SiO 2 and Y 2O 3.

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