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Comparison of chemical vapor deposition of TiN using tetrakis-diethylamino-titanium and tetrakis-dimethylamino-titanium

Authors
Journal
Thin Solid Films
0040-6090
Publisher
Elsevier
Publication Date
Volume
253
Identifiers
DOI: 10.1016/0040-6090(94)90363-8
Keywords
  • Metallization
  • Organometallic Vapour Deposition
  • Titanium Nitride
Disciplines
  • Chemistry

Abstract

Abstract The attributes and limitations of chemically vapor-deposited titanium nitride films from the reaction of tetrakis-diethylamino-titanium with ammmonia and tetrakis-dimethylamino-titanium wiht ammonia are discussed. Deposited films were characterized by growth rate, resistivity, surface morphology and step coverage over contact structures. Films deposited without ammonia flow were unstable in the atmosphere and Auger analysis showed a higher relative carbon content. It was found that the deposition pressure had a stronger effect than did the deposition temperature on the bulk resistivity and surface roughness. A higher pressure has a tendency to reduce the resistivity. Films appear smooth at low deposition temperatures and low pressures. Films become rough at high deposition temperatures and high pressures. The deposition process and resulting TiN layers are successfully integrated in a chemically vapor-deposited W plus fill applciation.

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