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Auger-free SiSiGe quantum well structures for infra-red detection at 10 μm

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
39
Issue
2
Identifiers
DOI: 10.1016/0038-1101(95)00129-8
Disciplines
  • Engineering
  • Physics

Abstract

Abstract We have identified SiSiGe quantum well structures which strongly absorb light in the 10–15 μm range and whose band structure is engineered so that the Auger recombination processes are inhibited, thus enhancing the efficiency of such a device. We also present a comparison of our calculated line-shapes with recent experimental results.

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