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Behavioral electromagnetic models of high‐speed p‐i‐n photodiodes

Authors
Publication Date
Keywords
  • This Article Presents A Methodology For Developing Small‐Signal Behavioral Electromagnetic (Em) Mo
  • The Em Model Includes Rc Bandwidth Limitation Effect And Transit‐Time Effect
  • The Model Is Capable Of Accurately Modeling Arbitrary Complex Parasitics Of Pd Chips
  • It Can Be Used To Predict The Optical‐To‐Electrical (O/E) Response Of Pds With Various P‐I‐N
  • Compared To Equivalent Circuit Models
  • Em Models Avoid Developing Complicated Circuit Network To Represent Complex Chip Parasitics As Well
  • © 2011 Wiley Periodicals
  • Inc
  • Microwave Opt Technol Lett 53:2530–2533
  • 2011
  • View This Article Online At Wileyonlinelibrary
  • Com
  • Doi 10
  • 1002/Mop
  • 26327
Disciplines
  • Physics

Abstract

Behavioral electromagnetic models of high‐speed p‐i‐n photodiodes - DTU Orbit (16/04/14) Behavioral electromagnetic models of high‐speed p‐i‐n photodiodes - DTU Orbit (16/04/14) Jiang, C, Krozer, V, Johansen, TK, Bach, HG, Mekonnen, GG & Yan, L 2011, 'Behavioral electromagnetic models of high‐ speed p‐i‐n photodiodes' Microwave and Optical Technology Letters, vol 53, no. 11, pp. 2530-2533., 10.1002/mop.26327

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