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Cavity-enhanced superconducting single-photon detectors on GaAs substrate

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Proceedings Symposium IEEE Photonics Benelux Chapter, 2010, Delft, the Netherlands Cavity-Enhanced Superconducting Single-Photon Detectors on GaAs Substrate S. Jahanmiri Nejad,l~* A. Gaggero,2 D. Bitau1d,l~t F. Marsili)’3’ D. Sahin,’ F. Mattioli,2 R. Leoni,2 G.H. Harnhuis,’ R. Nötzel,’ R. Sanjines,3 and A. Fiore’ ‘COBRA Research Institute, Eindhoven University of Technology, Eindhoven, The Netherlands 2lstituto di Fotonica e Nanotecnologie, CNR, Roma, Italy 3Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland [email protected] ni Nanowire superconducting single photon detectors (SSPDs) are unique detectors for many applications in quantum information and communications technology, owing to their ultrafast photoresponse, low dark count rate and low timing jitter. However, they have limited detection efficiency due to small optical absorption in ultrathin wires. A promising approach to increase the photon absorption in SSPDs, is integrating them with advanced optical structures. We demonstrate the successful integration ofSSPDs with optical microcavities based on GaAs/AlAs Bragg mirrors. Characterization of these devices reveals clear cavity enhancement of the detection efficiency, resulting in a peak value of18% at 2=l300nm and T=4.2K Introduction Single photon detectors (SPDs) are essential components for a variety of potential applications ranging from biomedical imaging and VLSI circuit testing to quantum information and ultralong-distance optical communication [1]. Particularly in the last decade, the emergence of a novel SPD technology based on superconducting nanowires has drawn a considerable attention in this field [2]. Nanowire superconducting SPDs (SSPDs) are ultrathin, submicron wide NbN wires which are arranged in a meander-like geometry. SSPDs are cooled down well below the critical temperature (~l0K for ultrathin NbN layers) to operate in superconducting state. The photon detection process is based on formation of a resistive section

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