Affordable Access

Publisher Website

Study of long-term drift of a porous silicon humidity sensor and its compensation using ANN technique

Authors
Journal
Sensors and Actuators A Physical
0924-4247
Publisher
Elsevier
Publication Date
Volume
133
Issue
2
Identifiers
DOI: 10.1016/j.sna.2006.03.019
Keywords
  • Porous Silicon Sensor (Ps)
  • Humidity Sensing
  • Aging
  • Long-Term Drift
  • Compensation
  • Ann
  • Implementation

Abstract

Abstract Aging of porous silicon (PS) material is one of the important constraints for its large-scale commercial use as an accurate and reliable humidity sensor. It causes gradual drift of the sensor output with the passage of time. Present paper reports the systematic studies on the aging of the porous silicon humidity sensor with an objective to develop a signal-processing unit to compensate its long-term drift. Drift of the porous silicon sensor is first determined experimentally by periodic recalibration of the sensor with respect to a standard sensor. An ANN-based model is then developed, which can compensate drift due to its aging. Compensating ANN model is then hardware implemented using a simple electronics circuit. Experimental results using the circuit show that drift of approximately 13.5% has been compensated effectively.

There are no comments yet on this publication. Be the first to share your thoughts.

Statistics

Seen <100 times
0 Comments

More articles like this

Hysteresis compensation of a porous silicon relati...

on Sensors and Actuators B Chemic... Jan 01, 2006

Modeling, simulation and temperature compensation...

on Microelectronics Reliability Jan 01, 2005

ANN-based signal conditioning and its hardware imp...

on Sensors and Actuators B Chemic... Jan 01, 2006

A very sensitive porous silicon based humidity sen...

on Sensors and Actuators B Chemic... Jan 01, 2005
More articles like this..