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The effects of neutron irradiation and low temperature annealing on the electrical properties of highly doped 4H silicon carbide

Authors
Journal
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment
0168-9002
Publisher
Elsevier
Publication Date
Volume
622
Issue
1
Identifiers
DOI: 10.1016/j.nima.2010.06.211
Keywords
  • Neutron Irradiation
  • Silicon Carbide
  • Hall Effects
  • Annealing

Abstract

Abstract The effects of neutron irradiation on the electrical properties of highly doped 4H SiC were studied. The material was fabricated into standard Hall bars for characterization of the material’s resistivity, free-carrier concentration and electron Hall mobility as a function of 1MeV equivalent neutron fluence in SiC (Φ1MeV,SiCEq). The post-irradiation effects of low temperature (175°C) annealing on the same properties were also investigated. It was found that: (1) the material’s resistivity doubled for Φ1MeV,SiCEq=2.7×1016cm−2, (2) the resistivity recovered (i.e. decreased) by only 8+1% from its post-irradiation values after 2h of annealing, (3) the carrier concentration decreased linearly with Φ1MeV,SiCEq with a carrier removal rate of ∼48.5±6.3cm−1, (4) within experimental uncertainty, the carrier concentration recovered to its pre-irradiation values after 2h of annealing, (5) the Hall mobility decreased linearly with Φ1MeV,SiCEq with a mobility damage constant of (1.49±0.2)10−19Vs and (6) the Hall mobility was further degraded (i.e. decreased) by annealing. The mobility was found to decrease from its post-irradiation value by 27±8% after 2h of annealing.

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