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The performance of the A-site donor/B-site acceptor-cosubstituted (K, Bi) Bi4(Ti3.8M0.2)O15ferroelectric thin films with [formula omitted], and Ni

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
148
Identifiers
DOI: 10.1016/j.ssc.2008.09.008
Keywords
  • A. Ferroelectrics
  • A. Thin Films
  • B. Chemical Synthesis
Disciplines
  • Chemistry

Abstract

Abstract A-site donor/B-site acceptor-cosubstituted (K 0.45Bi 0.55)Bi 4(Ti 3.8M 0.2)O 15 ferroelectric thin films with M=Mn,Fe, and Ni were fabricated by chemical solution deposition and annealed at 600 ∘C for 30 min. Without incorporating lanthanides, the films displayed improved ferroelectricity when the cosubstitution of donor and acceptor formed the additional dipoles without the Ti 4+–Ti 3+ polaron and oxygen vacancies. The conduction mechanisms of the leakage current involved a field-assisted ionic conduction related to the polaron and a space charge limited conduction related to oxygen vacancies. Non-lanthanide KBTi–Mn and KBTi–Fe thin films displayed an improved ferroelectricity with high remanent polarization of 39 and 34 μC/cm 2, respectively.

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