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Optical constants of amorphous silicon films near the main absorption edge

Authors
Journal
Thin Solid Films
0040-6090
Publisher
Elsevier
Publication Date
Volume
2
Identifiers
DOI: 10.1016/0040-6090(68)90016-3

Abstract

Abstract The spectral dependence of the optical constants of amorphous silicon films near the main absorption edge shows that the energy band structure of crystalline silicon is essentially conserved after amorphization, but the absorption coefficient corresponding to indirect transitions is much increased. This is attributed to the structural disorder reigning in amorphous silicon.

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