Affordable Access

Publisher Website

Transient photoinduced absorption in optically biased a-Si:H

Authors
Journal
Journal of Non-Crystalline Solids
0022-3093
Publisher
Elsevier
Publication Date
Volume
66
Identifiers
DOI: 10.1016/0022-3093(84)90324-7

Abstract

Abstract The decay of photoinduced sub-bandgap absorption (PA) following pulsed excitation was studied as a function of cw bias illumination. Two temperature regimes were identified. At low temperature the dispersion parameter increases linearly with the steady state carrier population generated by the bias light. At high temperatures saturation of the change in the dispersion parameter is achieved. The low temperature result is explained by a bias controlled tunneling process while the high temperature results are explained by the multiple trapping process with the tail states under the saturation condition.

There are no comments yet on this publication. Be the first to share your thoughts.

Statistics

Seen <100 times
0 Comments

More articles like this

Transient Photoinduced Absorption in Ultrathin As-...

on Nanoscale Research Letters Nov 27, 2007

Dye laser circular dichroism and absorption of the...

on Chemical Physics Letters Jan 01, 1987

Low-field optically detected EPR spectroscopy of t...

on The Journal of Physical Chemis... Jun 16, 2005

Nature of trapped hole centres (A centres) in a-Si...

on Solid State Communications Jan 01, 1988
More articles like this..