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Experimental studies of ionization processes in sputtering of GaAs

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
348
Identifiers
DOI: 10.1016/0039-6028(95)00995-7
Keywords
  • Atom Emission
  • Atom-Solid Interactions
  • Gallium Arsenide
  • Ion Bombardment
  • Ion Emission
  • Ion-Solid Interactions
  • Sputtering

Abstract

Abstract Ionization processes in GaAs have been analyzed using primary ion beams (He +, Xe +) and primary neutral beams (He 0, Xe 0) with energies between 500 eV and 4 keV. The ionization probability of Ga + has been found to be independent of bombarding conditions and equal to 0.04. The As + and As − ionization yields depend very strongly on the bombarding conditions, and are the same for both ion and neutral particle bombardments. The absolute ionization probability of As + for Xe impact changes from 8 × 10 −7 to 2 × 10 −5 when the primary beam energy changes from 500 eV to 4 keV. Taking these experimental results into account, the most probable ionization process for As is suggested and discussed.

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