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Characterisation of electromigration damage by multiple electrical measurements

Authors
Journal
Microelectronics Reliability
0026-2714
Publisher
Elsevier
Publication Date
Volume
33
Identifiers
DOI: 10.1016/0026-2714(93)90088-g

Abstract

Abstract An a.c. bridge system has been developed for electromigration studies of integrated circuit metal film interconnects. Changes in the resistance, second and third harmonic amplitudes of the a.c. excitation signal and the generation of excess low frequency noise have been studied on specimens which have been subjected to a high temperature and current stress. The experimental results show a closer relationship with electromigration damage of the harmonic content and the excess noise than of the resistance changes.

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