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A 180 GHz differential Colpitts VCO in 65 nm CMOS

Authors
  • Meng, Xiangyu1
  • Wang, Zhihua1
  • Chi, Baoyong1
  • 1 Tsinghua University, Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology, Beijing, 100084, China , Beijing (China)
Type
Published Article
Journal
Analog Integrated Circuits and Signal Processing
Publisher
Springer US
Publication Date
Oct 09, 2015
Volume
86
Issue
1
Pages
25–31
Identifiers
DOI: 10.1007/s10470-015-0638-4
Source
Springer Nature
Keywords
License
Yellow

Abstract

A 180 GHz differential Colpitts VCO in 65 nm CMOS is presented. The choice and placement of the varactors are analyzed with the Y parameters looking into the oscillation loop. Based on this analysis, the varactors are placed close to the source terminal of the transistors to minimize their load effect on the oscillator. The VCO occupies 0.097 mm2 core die area and consumes 21.8 mW DC power from a 1.2 V power supply. The measured tuning range is from 174.9 to 178.9 GHz. The measured output power after calibrating out the measurement conversion loss is −13.15 dBm and the measured phase noise at 10 MHz offset is −94 dBc/Hz.

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