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Growth of β-FeSi2and FeSi layers by reactive deposition using Sb-related intermetallic compounds

Authors
Journal
Thin Solid Films
0040-6090
Publisher
Elsevier
Publication Date
Volume
369
Identifiers
DOI: 10.1016/s0040-6090(00)00817-8
Keywords
  • β-Fesi2
  • Sb
  • Epitaxy
  • Interdiffusion
  • Surfactant

Abstract

Abstract β-FeSi 2 and FeSi layers were grown on Si substrates by deposition of Sb-related intermetallic compounds and simultaneous reaction with Si substrates. Higher quality epitaxialβ-FeSi 2 layers with smooth interfaces were obtained on the Si(111) substrates at the substrate temperatures ranging from 650 to 700°C in comparison to the layers grown by conventional reactive deposition epitaxy (RDE). Moreover, the growth mechanism of FeSi and Sb-related intermetallic compounds have been discussed.

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