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InGaN nanorods grown on (1 1 1) silicon substrate by hydride vapor phase epitaxy

Authors
Journal
Chemical Physics Letters
0009-2614
Publisher
Elsevier
Publication Date
Volume
380
Identifiers
DOI: 10.1016/j.cplett.2003.09.020

Abstract

Abstract In this study, we report on the growth of the defect-free (dislocation-free) InGaN nanorods on (1 1 1) silicon substrate by our hydride vapor phase epitaxy (HVPE) system. Morphological and structural characterization of the InGaN nanorods by high-resolution scanning electron microscopy (HRSEM) and transmission electron microscopy (HRTEM) indicates that the nanorods are straight and preferentially oriented in the c-axis direction. Cathodoluminescence (CL) characteristic of the single InGaN nanorod shows a strong blue emission peaking at around 428 nm at room temperature.

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