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High-mobility two-dimensional electron gases at oxide interfaces: Origins and opportunities.

Authors
Publisher
Institute of Physics Publishing
Publication Date
Keywords
  • Oxide Interfaces
  • Two-Dimensional Electron Gas (2Deg)
  • Srtio3
  • Oxygen Vacancies
Disciplines
  • Design

Abstract

Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electron gas (2DEG) at oxide interfaces. Due to the presence of oxygen vacancies at the SrTiO3 surface, metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3 has Al, Ti, Zr, or Hf elements at the B sites. Furthermore, relying on interface-stabilized oxygen vacancies, we have created a new type of 2DEG at the heterointerface between SrTiO3 and a spinel g-Al2O3 epitaxial film with compatible oxygen ion sublattices. This 2DEG exhibits an electron mobility exceeding 100000 cm2·V-1·s-1, more than one order of magnitude higher than that of hitherto investigated perovskite-type interfaces. Our findings pave a way for the design of high-mobility all-oxide electronic devices and open a route toward the studies of mesoscopic physics with complex oxides.

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