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Local vibrational modes in Gamma-irradiated GaN grown by metal-organic chemical vapor deposition

Authors
Journal
Materials Science in Semiconductor Processing
1369-8001
Publisher
Elsevier
Publication Date
Volume
4
Issue
6
Identifiers
DOI: 10.1016/s1369-8001(02)00017-3
Disciplines
  • Chemistry
  • Physics

Abstract

Abstract We have studied the effects of gamma-ray irradiation on Fourier transform infrared grazing incidence reflection–absorption (FTIR-GIRA) spectra of the GaN films grown on α-Al 2O 3 (0 0 0 1) substrates using the atmospheric pressure metal-organic chemical vapor deposition process. After gamma-ray irradiation, the intensities of FTIR-GIRA spectra are enhanced and a series of new absorption features appeared. Among them, those at 3440, 3355, 3088, 2819, 2712, 2100, 1426 and 894 cm −1 are discussed and identified. The reason why gamma-ray irradiation can enhance the intensities of and cause new features in FTIR-GIRA spectra of GaN films is discussed.

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