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Boron-doped Si/Ge superlattices and heterostructures

Authors
Journal
Thin Solid Films
0040-6090
Publisher
Elsevier
Publication Date
Volume
222
Identifiers
DOI: 10.1016/0040-6090(92)90057-i
Disciplines
  • Physics

Abstract

Abstract Boron-doped short period Si m Ge m ( n + m ⩽ 20) superlattices, grown by molecular beam epitaxy, show significantly better transport properties than comparable alloys. Their quality is sensitive to the growth temperature. In single Si/Si 1− x Ge x p-type modulation-doped heterostructures, low temperature Hall mobilities of up to 4300 cm 2 V −1 s −1 are achieved. We observe clear quantum Hall plateaux and Shubnikov-de Haas oscillations up to a filling factor of 11.

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