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Pseudomorphic GaxIn1−xAs on InP for HEMT structures grown by MBE

Authors
Journal
Microelectronic Engineering
0167-9317
Publisher
Elsevier
Publication Date
Volume
19
Identifiers
DOI: 10.1016/0167-9317(92)90448-z

Abstract

Abstract Material characteristics of strained MBE GaInAs layers on InP have been investigated in dependence of the In-content. Pseudomorphic AlInAs/GaInAs HEMT structures are grown and characterized with systematically increasing the In-content of the channel layer. Preliminary results on 0.25 μm gate length devices are presented.

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