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The diffusion of oxygen in silicon and germanium

Authors
Journal
Journal of Physics and Chemistry of Solids
0022-3697
Publisher
Elsevier
Publication Date
Volume
15
Identifiers
DOI: 10.1016/0022-3697(60)90106-2

Abstract

Abstract Using a simple model for the structure of oxygen in silicon and germanium crystals and making the assumption that internal friction and diffusion are both due to the same relaxation phenomenon, the diffusion coefficient of oxygen was calculated from experimental data on internal friction. The results are: D = D 0 exp − ( U kT ) ; O in Si: D 0 = 0.21 cm 2/sec, U = 2.55 eV; O in Ge: D 0 = 0.17 cm 2/sec, U = 2.02 eV. The calculated values of D are in reasonable agreement with available experimental data.

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