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Improved electrical stability and UV emission of zinc oxide thin films prepared by combination of metalorganic chemical vapor deposition technique and post-deposition hydrogen doping

Authors
Journal
Organic Electronics
1566-1199
Publisher
Elsevier
Publication Date
Volume
8
Issue
1
Identifiers
DOI: 10.1016/j.orgel.2006.10.010
Keywords
  • Zno Film
  • Hydrogen Doping
  • Uv Emission
  • Electrical Stability
  • Light-Emitting Diode
Disciplines
  • Physics

Abstract

Abstract Fourier transform infrared and photoluminescence spectroscopy provide strong evidence that post-deposition hydrogen doping of polycrystalline zinc oxide (ZnO) thin films improves the resistivity by increasing hydrogen-related shallow donors and hydrogen passivation of native defects. Improvement of the electrical stability and UV emission confirm that post-deposition hydrogen doping is a promising method to achieve high quality ZnO thin films for the use as transparent electrodes and/or UV light emitters in thin-film-based optoelectronic devices.

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