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Silicon wet etching: Hillock formation mechanisms and dynamic scaling properties

Authors
Journal
Physica A Statistical Mechanics and its Applications
0378-4371
Publisher
Elsevier
Publication Date
Volume
395
Identifiers
DOI: 10.1016/j.physa.2013.09.071
Keywords
  • Scaling
  • Etching Models
  • Monte Carlo Simulations

Abstract

Abstract Surface roughening due to anisotropic wet etching of silicon was studied experimentally and modeled using the Monte Carlo method. Simulations were used to determine the consequences of site-dependent detachment probabilities on surface morphology for a one- and two-dimensional substrate models, focusing on the formation mechanisms of etch hillocks. Dynamic scaling properties of the 1D model were also studied. Resorting to the height–height correlation function and the structure factor, it is shown that the model presents conventional and anomalous scaling (faceted) depending on the stability of the hillocks tops. We also found that there is an intermediate regime that cannot be described by the Family–Vicsek or anomalous scaling ansatz.

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