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Control of ZnO thin film surface by ZnS passivation to enhance photoluminescence

Authors
Journal
Thin Solid Films
0040-6090
Publisher
Elsevier
Publication Date
Volume
520
Issue
6
Identifiers
DOI: 10.1016/j.tsf.2011.08.108
Keywords
  • Atomic Layer Deposition
  • Zinc Oxide
  • Zinc Sulfide
  • Photoluminescence
  • Multi-Layer

Abstract

Abstract To enhance the optical property of zinc oxide (ZnO) thin film, zinc sulfide (ZnS) thin films were formed on the interfaces of ZnO thin film as a passivation and a substrate layer. ZnO and ZnS thin films were deposited by atomic layer deposition (ALD) using diethyl zinc, H 2O, and H 2S as precursors. Investigations by X-ray diffraction and transmission electron microscopy showed that ZnS/ZnO/ZnS multi-layer thin films with clear boundaries were achieved by ALD and that each film layer had its own polycrystalline phase. The intensity of the photoluminescence of the ZnO thin film was enhanced as the thickness of the ZnO thin film increased and as ZnS passivation was applied onto the ZnO thin film interfaces.

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