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A-Si:H drift mobility - study of isotropy

Authors
Journal
Journal of Non-Crystalline Solids
0022-3093
Publisher
Elsevier
Publication Date
Volume
114
Identifiers
DOI: 10.1016/0022-3093(89)90155-5

Abstract

Abstract The systematic difference has been observed between (μτ) cc and (μτ) ss - the mobility-lifetime product found in a-Si:H from TOF charge collection or steady state photoconductivity. Its recently suggested explanation (μτ-anisotropy) is briefly discussed. The new TOF measurements made under clear experimental conditions on unique a-Si:H samples in both “perpendicular” and “planar” directions convincingly show that a-Si:H is isotropic material with μ ⊥ = μ ∥. Even ( μτ) ⊥ t ( μτ) ∥ when the same method (TOF change collection) is used.

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