In this work we present strain balanced InAs quantum post of exceptional length in the context of photovoltaics. We discuss the general properties of these nanostructures and their impact in the practical implementation of an intermediate band solar cell. We have studied the photocurrent generated by strain balanced quantum posts embedded in a GaAs single crystal, and compared our results with quantum dot based devices. The incorporation of phosphorous in the matrix to partially compensate the accumulated stress enables a significant increase of the quantum post maximum length. The relative importance of tunneling and thermal escape processes is found to depend strongly on the geometry of the nanostructures. tunneling and thermal escape processes is found to depend strongly on the geometry of the nanostructures.