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Extraction of free carrier density and mobility from the optical transmission data of tin-doped indium oxide thin films

Authors
Journal
Materials Letters
0167-577X
Publisher
Elsevier
Volume
23
Identifiers
DOI: 10.1016/0167-577x(95)00008-9

Abstract

Abstract A method for extracting the free electron density and mobility as well as the thickness of a semiconducting film from the optical transmission data is presented. The method is tested for tin-doped indium oxide thin films prepared with different thicknesses and different dopant concentrations. Thickness values extracted from this method agree very closely with those measured by interferometric method. Also, different samples prepared with the same dopant concentration exhibit similar carrier density but differ from those prepared with different dopant concentrations.

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