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Annealing studies on GaN hydride vapor phase epitaxial layers

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
109
Issue
11
Identifiers
DOI: 10.1016/s0038-1098(99)00016-2
Keywords
  • A. Disordered Systems
  • B. Crystal Growth
  • C. Impurities In Semiconductors

Abstract

Abstract A dramatic change is observed in the photoluminescence spectrum of a GaN sample after annealing at a temperature of ∼835°C. The as-grown sample, and the same sample annealed at 830°C, show a single dominant donor-bound-exciton (D 0, X) emission line. After annealing at ∼835°C, the emission evolves into at least four broader emission lines. Increasing the annealing temperature to 840°C reverses the emission spectrum back to the single D 0, X line. Repeating the 835°C anneal again produces the evolved spectrum. We propose a model that can account for all of the spectral lines that are generated by the 835°C anneal. We also suggest some possible explanations for the dramatic changes that occur in the emission spectrum when the annealing is carried out over small temperature intervals.

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