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Deuterium diffusion inα-Si:H studied with elastic recoil detection

Authors
Journal
Journal of Non-Crystalline Solids
0022-3093
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/s0022-3093(05)80049-3
Keywords
  • Part I
  • Section 2. Hydrogen Diffusion And Effusion

Abstract

We have used elastic-recoil detection (ERD) with 10 MeV 28Si ions and buried layers of deuterium-rich material to measure diffusion coefficients of deuterium in undoped PECVD α-Si:H samples deposited at temperatures between 50 and 250°C. The results are consistent with our previous measurements of the optical bandgap during annealing. Especially for low deposition temperatures (∼50°C) we observe that microvoid-associated defects play an important role in the trapping of hydrogen and deuterium.

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