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Magnetic freeze-out of sub-accumulation conductance in InAs: 2D impurity-band behaviour?

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
73
Issue
1
Identifiers
DOI: 10.1016/0038-1098(90)90018-7
Disciplines
  • Physics

Abstract

Abstract A peak in the transconductance of a n-InAs MOS device is observed below the conduction-band population threshold for accumulation. The freeze-out of the peak in an applied magnetic field is strongest when the field is oriented nornal to the accumulation layer and obeys a decay law consistent with that expected for the limit in which the magnetic energy is large compared to impurity binding energies in InAs. The data are interpreted in terms of a 2D impurity band in InAs and contrasted to observations of 2D impurity band behaviour in Si inversion layers and in GaAs quantum wells and δ-doping layers.

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