10-20 Gbit/s GaAs/AlGaAs HEMT ICs for high speed data links

V. Hurm; M. Lang; G. Ludwig; A. Hülsmann; J. Schneider; M. Berroth; G. Kaufel; K. Köhler; U. Nowotny; B. Raynor; Z.-G. Wang; P. Wennekers

10-20 Gbit/s GaAs/AlGaAs HEMT ICs for high speed data links

Authors

Hurm, V.
Lang, M.
Ludwig, G.
Hülsmann, A.
Schneider, J.
Berroth, M.
Kaufel, G.
Köhler, K.
Nowotny, U.
Raynor, B.
Wang, Z.-G.
Wennekers, P.

Publication Date

Jan 01, 1992

Source

Fraunhofer-ePrints

Keywords

Demultiplexer
Laser Driver
Lasertreiber
Multiplexer
Optical Data Link
Optische Datenverbindung
Transimpedance Amplifier
Transimpedanzverstärker

Language

English

License

Unknown

External links

Full record on publica.fraunhofer.de

Abstract

A set of ICs has been developed for the high speed data link at data rates above 10 Gbit/s. A recessed gate process for double pulse doped quantum well transistors has been used with e-beam written 0.3 Mym gates. A 4 bit multiplexer and a laser diode driver for the transmitter as well as transimpedance amplifier, bit synchronizer and 4 bit demultiplexer for the receiver have been successfully operated with data rates up to 20 Gbit/s.

Abstract

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